Cubic GaN Shows Potential for LEDs

Anvil Semiconductors and the Cambridge Centre for GaN at the University of
Cambridge report having grown cubic GaN on 3C-SiC on silicon wafers using
MOCVD. Anvil produced the underlying 3C-SiC layers using the company’s patented
stress relief IP that enables growth of device quality silicon carbide on 100mm
diameter silicon wafers. Anvil contends that …

Category: inframaterialsubstrate

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