IHS Inc predicts that the penetration of gallium nitride-on-silicon
(GaN-on-Si) wafers into the light-emitting diode (LED) market will increase at
a compound annual growth rate (CAGR) of 69 percent from 2013 to 2020. IHS
forecasts that by 2020, GaN-on-Silicon LEDs will account for 40 percent of all
GaN LEDs manufactured.
In 2013, 95 percent of …
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