Nanjing University Researchers Remove Silicon Wafer Underneath InGaN LED and Increases its Light Output

Researchers at China’s Nanjing University of Posts and
Telecommunications have improved the performance of indium gallium nitride
(InGaN) LEDs on a silicon (Si) substrate. The researchers removed the silicon
underneath the device to created a membrane of InGaN LED to get the performance
improvement. [Zheng Shi et
al, Appl. Phys. Express, vol7, p082102, 2014

The …

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