Researchers at China’s Nanjing University of Posts and
Telecommunications have improved the performance of indium gallium nitride
(InGaN) LEDs on a silicon (Si) substrate. The researchers removed the silicon
underneath the device to created a membrane of InGaN LED to get the performance
improvement. [Zheng Shi et
al, Appl. Phys. Express, vol7, p082102, 2014].
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