Plessey, Anvil Semiconductors and the University of Cambridge announced today that they are working together to fabricate high efficiency LEDs in cubic GaN grown on Anvil’s 3C-SiC / Si substrates. Cubic GaN has the potential to overcome the problems caused in conventional LEDs by the strong internal electric fields which impair carrier recombination and contribute to efficiency droop. This is particularly true for green LEDs where the internal electric fields are stronger and are believed to cause a rapid reduction in efficiency at green wavelengths known as “the green gap”. The availability of cubic GaN from a readily commercialisable process on large diameter silicon wafers is as a key enabler for increasing the efficiency of green LEDs and reducing the cost of LED lighting.
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