These recent breakthroughs are the result of the enhanced plasma system in combination with new process steps which are now yielding continuing performance improvements as the company furthers progress towards its Brighter LEDs milestone.
BluGlass Chief Technology Officer, Dr. Ian Mann said “The RPCVD p-GaN based LED performance in the last month has undergone a step change improvement. This has been achieved by focusing on two key aspects – the process steps for initiating the RPCVD p-GaN growth; and in finalising the last layers grown by MOCVD – in effect, making sure the RPCVD and MOCVD steps are compatible. He added “Following these recent developments, we are confident that the team is on the right path to demonstrate that low temperature RPCVD can enhance the performance of LEDs fabricated solely by MOCVD today.”
BluGlass is aiming to demonstrate to the industry that an RPCVD top layer (the p-GaN layers) can improve the light output of an LED.
Additionally, the next generation RPCVD System, the BLG-300, is nearing completion and is expected to be growing GaN later this month. This ex-production scale system is a significantly larger system than the current R&D workhorse and will effectively double BluGlass’ research and development capacity. Having multiple RPCVD systems will greatly enhance the team’s capability to address the LED milestones, the scaling of the technology towards 8” wafer deposition and the potential performance advantages of a low temperature CVD process for GaN on silicon.
Founded in June 2005 as a result of more than 15 years research at Sydney’s Macquarie University and floated in September 2006 on the Australian Stock Exchange (ASX: BLG), BluGlass is developing semiconductor processes and equipment for the manufacture of high efficiency devices such as next generation lighting technology, light emitting diodes (LEDs) and concentrated solar cells.
BluGlass’ proprietary technology, remote plasma chemical vapour deposition (RPCVD) has the potential, once commercialised to offer manufacturers significant performance, cost and throughput benefits. By growing group III nitrides, such as gallium nitride (GaN) at lower temperatures, with the potential for greater production scalability, electronic manufacturers can produce higher performing devices at lower costs in a more environmentally sensitive way.
The Company holds a number of patents in key semiconductor markets including the US, China, Europe and Japan.
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