Like the existing members of the TL1L4 series, GaN-on-Si  technology has been utilised to create LEDs optimised for both output and energy efficiency. However, the new 4A5B type improves upon these existing products by providing a luminous flux of 140 lm (min.) , compared to 130 lm (min.) . The new products make it possible to meet the market demands for improved lighting fixture efficacy by achieving efficacies of over 110 lm/W . The LEDs can also contribute to reducing the power consumed by LED lighting.
Measuring 3.5 mm x 3.5 mm, with a lens-top, the new LEDs offer differing levels of correlated colour temperature (CCT), with the TL1L4-DW0 providing 6500 K, the TL1L4-NT0 providing 5700 K, the TL1L4-NW0 5000 K and the TL1L4-WH0 4000 K. All offer a colour rendering index of Ra70 min. and a typ. forward voltage of 2.8 V.
 Technology to produce gallium nitride (GaN) on silicon (Si) wafers.
 Test conditions: IF=350mA, Tj=85°C
 Under conditions of 90% driver efficiency, 90% optical efficiency, Tj=85°C
About Toshiba Electronics Europe:
Toshiba Electronics Europe (TEE) is the European electronic components business of Toshiba Corporation, which is ranked among the world’s largest semiconductor vendors. TEE offers one of the industry’s broadest IC and discrete product lines including high-end memory, microcontrollers, ASICs and ASSPs for automotive, multimedia, industrial, telecoms and networking applications. The company also has a wide range of power semiconductor solutions as well as storage products including HDDs, SSDs, SD Cards and USB sticks.
TEE was formed in 1973 in Neuss, Germany, providing design, manufacturing, marketing and sales and now has headquarters in Düsseldorf, Germany, with branch offices in France, Italy, Spain, Sweden and the United Kingdom. TEE employs approximately 300 people in Europe. Company president is Mr. Takashi Nagasawa.
For more company information visit TEE’s web site at http://ift.tt/1DpbyTX.
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